2W 830nm Single-emitter SE Bare Laser Bar

2W 830nm Single-emitter SE Bare Laser Bar

High reliability Advanced in power,brightness,efficiency and divergence. Customized Option if needed.

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Product Details

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    2W 830nm Single Emitter Bare Laser Bar

    Single-emitter laser diode (SE) chips are the basic building block for high-power and high-brightness semiconductor laser modules.

    We manufactures single chips with a variety of output powers and wavelengths. 


    Operation:

    Central Wavelength
    808nm
    Optical output power
    2W
    Operation mode
    CW
    Power modulation
    100%
    Geometrical:

    Emitter Width
    40um
    Cavity Length
    2000um
    Chip Width
    400um
    Cavity Height
    150um
    Electro Optical Data:

    Fast Axis Divergency (FWHM)
    35deg
    Slow Axis Divergency (FWHM)
    10deg
    Spectral Bandwidth (FWHM)
    3nm
    Pulse Wavelength
    808nm
    Slope Efficiency
    1.2W/A
    Conversion Efficiency
    55%
    Threshold Current
    0.3A
    Operating Current
    2A
    Operating Voltage
    1.8V
    Temperature Characteristics
    0.28nm/℃
    Polarization
    TE
    LD Operating Temperature
    25℃

     

    Remarks

    Other models are available upon your choices,pls contact us freely.




Brandnew Technology, one of the leading diode laser manufacturers and suppliers in China, has a professional factory which manufacturers high quality 2w 830nm single-emitter se bare laser bar and sells at competitive price. Welcome to wholesale our products made in China.
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