2W 830nm Single-emitter SE Bare Laser Bar

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 2w 830nm single-emitter se bare laser bar. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

2W 830nm Single Emitter Bare Laser Bar Single-emitter laser diode (SE) chips are the basic building block for high-power and high-brightness semiconductor laser modules. We manufactures single chips with a variety of output powers and wavelengths.

Operation:
Central Wavelength	808nm
Optical output power	2W
Operation mode	CW
Power modulation	100%

Geometrical:
Emitter Width	40um
Cavity Length	2000um
Chip Width	400um
Cavity Height	150um

Electro Optical Data:
Fast Axis Divergency (FWHM)	35deg
Slow Axis Divergency (FWHM)	10deg
Spectral Bandwidth (FWHM)	3nm
Pulse Wavelength	808nm
Slope Efficiency	1.2W/A
Conversion Efficiency	55%
Threshold Current	0.3A
Operating Current	2A
Operating Voltage	1.8V
Temperature Characteristics	0.28nm/℃
Polarization	TE
LD Operating Temperature	25℃




Remarks

Other models are available upon your choices,pls contact us freely.

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