100W 808nm Laser Diode Bare Bar

100W 808nm Laser Diode Bare Bar

100W 808nm Single Bar Laser Chip
Send Inquiry
Chat Now
Description

100W 808nm Laser Diode Bare Bar

 

20W 940nm Single Emitter Laser Chip
 
 

Product Description

• Low fill factor bars (typ. ≤ 30% fill factor) featuring low beam-parameter-product (BPP) suited for fiber coupling
• High-power bars (typ. 50% fill factor) for up to 300 W cw- and hard-pulse (hp) operation suited for optical pumping and direct-diode-laser (DDL) applications
• QCW bars (typ. FF > 65% fill factor): for up to 500 W qcw- and long-pulse (lp) operation suited for optical pumping and medical applications
Benefits:
• Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
• Powerful: High, reliable output power and ideal beam characteristics.
• Economical: Our semiconductors are very efficient and are characterized by a long service life.

Data Sheet:

Item No.: LC808SB100

Optical

Typ

Central Wavelength

808nm

Output Power

100W

Working Mode

CW

Spectrum Width

4nm

Number of Emitter

47

Emitter Width

100μm

Emitter Pitch

200μm

Filling Factor

50%

Bar Width

10000μm

Electrical

 

Operating Current Iop

105A

Threshold Current Ith

18A

Operating Voltage Vop

1.8V

Conversion Efficiency

55%

Thermal

 

Operating Temperature

15-35℃

Wavelength Temperature Coefficient

0.28nm/℃

 

 

202003181418552430667

Hot Tags: 100w 808nm laser diode bare bar suppliers, manufacturers China, factory, wholesale, made in China