2W 660nm TO9 Package Diode Laser

2W 660nm TO9 Package Diode Laser

Item No: TO660DL2
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Description

 

product-753-502
 
 

2W 660nm TO9 Package Diode Laser

Features:

  • 2W blue laser diode at 660nm

  • Highly focusable and able to be well-collimated

  • Compact TO 9mm TO-Can packag

  • Wide operating temperature range of 0℃ to 65℃

  • Gallium Nitride blue laser technology allows longer lifetimes at elevated temperatures

 
Application:
  • Oximetry
  • Material testing and analysis
  • Fluorescence excitation
  • Laser projector
  • Food quality testing

 

Specification

Item No.: TO660DL2

Item Name: 660nm 2W TO Diode Laser

Optical  
Center Wavelength 660nm±10nm
Output Power 2W
Emitter Size 110um
Electrical  
Threshold Current lth 0.5A
Operating Current Lop 2.1A
Working Voltage  2.2V
Thermal  
Test Temperature 25℃
Storage Temperature -40~80℃

 

Drawing:

product-544-413

TO mount wavelengths included:405nm, 445nm,450nm, 520nm, 635nm, 638nm, 640nm, 650nm, 660nm, 780nm,785nm, 795nm, 808nm, 810nm, 830nm, 850nm, 860nm, 905nm, 940nm, 980nm,1050nm, 1060nm, 1064nm, 1300nm, 1310nm, 1550nm, 1653nm, 2004nm, 2327nm,etc.

Other wavelengths can also be customized, welcome to inquire!

2W 660nm TO9 Package Diode Laser compared to other high power semiconductor lasers, this red laser diode is relatively unaffected by operating temperature, with a case operating temperature range of -40C to 80C. Typical lifetime at 25℃ is 20,000 hours. Therefore, this red laser diode is a reliable choice for a wide range of environments and applications. In addition, this GaN laser has a special TO5 (9mm) package that gives it lower thermal resistance than is typical for laser diodes of this power level. The 9mm TO-Can is also hermetically sealed, protecting the semiconductor laser chip from dust and other contaminants. In contrast, high power red and near infrared laser diodes typically require a C-type package, which has exposed surfaces.

product-291-285

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