Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 850nm 10w to18 pulsed vcsel diode. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
850nm 10W TO18 Pulsed VCSEL Diode
High-power Vertical-Cavity, Surface-Emitting Laser (VCSEL) array technology in a TO package that produces unmatched low-speckle and uniform illumination quality, making it ideal for laser illumination applications.
Features
850nm Multimode VCSEL; Good thermal conduction
Oxide isolation technology; Short rise time
High reliability; Easy to collimate
It is designed to be utilized for sensing applications as well as air transmission of data. It has a back monitor photodiode used for optical power management or optical reception.
Specifications:
|
Parameters |
Typ. |
|
Pulse Optical Power |
10W |
|
Threshold Current |
0.05A |
|
Forward Pulse Current |
73A |
|
Emission Area |
215*226um |
|
Peak Wavelength |
850nm |
|
Pulse Forward Voltage |
30V |
|
Series Resistance |
0.41Ω |
|
Beam Angle |
20Degrees |
|
Wavelength Shift |
0.07nm/℃ |
|
Rise time |
2.4ns |
|
Soldering Temperature |
260℃ |
|
Duty Cycle |
0.1% |
|
Substrate |
AlN(3535)/Cu(TO18) |
|
Case Operating Temp |
-40~80℃ |
|
Storage Temp |
-40~80℃ |
LIV Graph
Pulse and Wavelength
Mechanical Specifications (unit:mm)
Hot Tags: 850nm 10w to18 pulsed vcsel diode suppliers, manufacturers China, factory, wholesale, made in China