Hangzhou Brandnew Technology Co., Ltd. is one of the most reliable manufacturers and suppliers of 850nm 10w to18 pulsed vcsel diode in China. With abundant experience, we warmly welcome you to wholesale advanced 850nm 10w to18 pulsed vcsel diode made in China here from our factory. Contact us for more details.
850nm 10W TO18 Pulsed VCSEL Diode
High-power Vertical-Cavity, Surface-Emitting Laser (VCSEL) array technology in a TO package that produces unmatched low-speckle and uniform illumination quality, making it ideal for laser illumination applications.
Features
850nm Multimode VCSEL; Good thermal conduction
Oxide isolation technology; Short rise time
High reliability; Easy to collimate
It is designed to be utilized for sensing applications as well as air transmission of data. It has a back monitor photodiode used for optical power management or optical reception.
Specifications:
|
Parameters |
Typ. |
|
Pulse Optical Power |
10W |
|
Threshold Current |
0.05A |
|
Forward Pulse Current |
73A |
|
Emission Area |
215*226um |
|
Peak Wavelength |
850nm |
|
Pulse Forward Voltage |
30V |
|
Series Resistance |
0.41Ω |
|
Beam Angle |
20Degrees |
|
Wavelength Shift |
0.07nm/℃ |
|
Rise time |
2.4ns |
|
Soldering Temperature |
260℃ |
|
Duty Cycle |
0.1% |
|
Substrate |
AlN(3535)/Cu(TO18) |
|
Case Operating Temp |
-40~80℃ |
|
Storage Temp |
-40~80℃ |
LIV Graph
Pulse and Wavelength
Mechanical Specifications (unit:mm)
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