Description
10Bars 1000W 808nm Horizontal Stack Diode Laser
Features:
- High Efficiency
- High-precision
- Low Environmental Requirements
- Long Working Lifetime
Application:
- Defense
- Scientific Research
- Military Project
- Diode Pumping Solid-State market
10Bars 1000W 808nm Horizontal Stack Diode Laser
It has newest design with 10 Bars, 100W output power per bar.Especially for military and science application, with extra-high power,stabilized wavelength.
Specifications:
| Optical | |
| Center Wavelength λ | 808nm±3nm |
| Output Power | 100W |
| Number of Bar | 10 |
| Peak Output Power | 1000W |
| Working Mode | QCW |
| Bar Pitch | 0.4mm |
| Emission Area | 10x3.6mm |
| Fast Axis Divergence(FWHM) | 38Deg |
| Slow Axis Divergence (FWHM) | 12Deg |
| Spectral Width FWHM | 4nm |
| Slope Efficiency | 12W/A |
| Pulse Width | 400us |
| Duty Cycle | 4% |
| Frequency | ≤100Hz |
| Electrical | |
| Operating Current Iop | 120A |
| Threshold Current Ith | 23A |
| Operating Voltage Vop | 20V |
| Power Conversion Efficiency | 50% |
| Thermal | |
| Operating Temperature | -40~70℃ |
| Storage Temperature | -60~85℃ |
| Wavelength Temperature Coefficient | ～0.3nm/℃ |
Drawing:
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