10Bars 1000W 808nm Horizontal Stack Diode Laser

10Bars 1000W 808nm Horizontal Stack Diode Laser

Item No.:CC808HA1000
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 10bars 1000w 808nm horizontal stack diode laser. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

10Bars 1000W 808nm Horizontal Stack Diode Laser

 

Features:

  • High Efficiency
  • High-precision
  • Low Environmental Requirements
  • Long Working Lifetime
 

Application:

  • Defense
  • Scientific Research
  • Military Project
  • Diode Pumping Solid-State market
product-800-800

 

 

10Bars 1000W 808nm Horizontal Stack Diode Laser

 

It has newest design with 10 Bars, 100W output power per bar.Especially for military and science application, with extra-high power,stabilized wavelength.

Specifications:

 

Optical  
Center Wavelength λ 808nm±3nm
Output Power 100W
Number of Bar 10
Peak Output Power 1000W
Working Mode QCW
Bar Pitch 0.4mm
Emission Area 10x3.6mm
Fast Axis Divergence(FWHM) 38Deg
Slow Axis Divergence (FWHM) 12Deg
Spectral Width FWHM 4nm
Slope Efficiency 12W/A
Pulse Width 400us
Duty Cycle 4%
Frequency ≤100Hz
   
Electrical  
Operating Current Iop 120A
Threshold Current Ith 23A
Operating Voltage Vop 20V
Power Conversion Efficiency 50%
   
Thermal  
Operating Temperature -40~70℃
Storage Temperature -60~85℃
Wavelength Temperature Coefficient ~0.3nm/℃

 

Drawing: 

product-786-580

 

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