300mW 500mW 976nm Laser Chip Unmounted Bar
The working material of 300mW 500mW 976nm Laser Chip Unmounted Bar is semiconductor material, which forms a P-N junction by combining P-type semiconductor and N-type semiconductor material. Through the forward current, the particle number inversion is achieved, and under the technical constraints of the reflective material, the stimulated radiation light amplification is achieved. This process involves electrical excitation as the pump source, semiconductor material as the gain medium, through the resonant cavity mode selection amplification, and then outputting the laser to complete the photoelectric conversion
Advantages:
> long lifetime
> high efficiency
> widely used in Industrial pump, Laser illumination, R&D and other fields
Specification
| Optical | Min | Typ | Max | Unit |
| Central Wavelength | 971 | 976 | 981 | nm |
| Output Power | 300 | 500 | mW | |
| Spectrum Width | 1.6 | 2 | nm | |
| Slope Efficiency | 0.75 | 0.8 | W/A |
| Electrical | Min | Typ | Max | Unit |
| Operating Current Iop | 600 | 700 | 800 | mA |
| Threshold Current Ith | 30 | mA | ||
| Operating Voltage Vop | 1.5 | 1.7 | 1.9 | V |
| Conversion Efficiency | 35 | 40 | % |
| Thermal | Min | Typ | Max | Unit |
| Operating Temperature | 15 | 20 | 25 | ℃ |
| Coefficient | 0.3 | nm/℃ |
Order Procedure:
1. Contact us for more details by email
2. We send PI to you for payment, payment term is T/T or Western Union
3. Once payment is done, we will arrange production
4. Delivery time is 1-4 weeks depends on different order qty and request.
5. After delivery, we will send you DHL UPS tracking no.
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