780nm 300W QCW Bare Chip Diode Laser

780nm 300W QCW Bare Chip Diode Laser

Item No.: LC780SB300
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 780nm 300w qcw bare chip diode laser. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

780nm 300W QCW Bare Chip Diode Laser

Overview

 

Features:

  • 300W peak output power under QCW operation mode
  • 10mm single bar structure with 62 emitters and 75% filling factor
  • Stable electrical performance with low threshold current 30A

Applications:

  • Suitable for laser pumping of solid-state gain media and specialty laser systems.
  • Applied in laser ablation and surface material treatment for industrial processing.
  • Used for high-energy laser illumination and active optical detection systems.
  • Deployed in scientific research experiments requiring 780nm QCW high-power laser source.
760nm 300W Unmounted QCW Chip Laser Diode

 

This 780nm 300W QCW single bar bare laser diode chip delivers high peak power output with compact 10mm bar size and well-controlled spectral characteristics. It features 62 emitters with 75% filling factor and matched QCW working parameters (200us pulse width, 400Hz repetition rate), supporting reliable operation for pumping, material processing and optoelectronic research applications.

 

Specification:

Item No.: LC780SB300

Optical

Typ

Central Wavelength

780nm

Wavelength Tolerance ±10nm

Output Power

300W

Working Mode

QCW

Pulse Width 200us
Rep.rate 400Hz
Duty Cycle 8.00%
Filling Factor 75%

Emitter Width

115μm

Emitter Pitch

150μm

Emitter Quantity

62

Bar Width

10mm

Cavity Length

1.5mm

Bar Thickness

115μm

Electrical

 

Operating Current Iop

<300A

Threshold Current Ith

30A

Operating Voltage Vop

2.0V

Thermal

 

Operating Temperature

25℃

Storage Temperature 0~+55℃

Wavelength Temperature Coefficient

0.3nm/℃

 

 

 

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