250W 808nm NIR QCW Laser Chip

250W 808nm NIR QCW Laser Chip

Item No.: LC808SB250
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 250w 808nm nir qcw laser chip. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

250W 808nm NIR QCW Laser Chip

Overview

 

Features:

  • 808nm NIR QCW single bar chip with 250W output power.
  • 10mm bar structure with 49 emitters and 50% filling factor.
  • Designed for QCW operation up to 8% duty cycle.

Applications:

  • Acts as high-power pump source for solid-state lasers and fiber laser systems.
  • Suitable for laser cladding, laser hardening and other thermal processing applications.
  • Used for infrared illumination and high-energy laser pumping research.
  • Applied in medical aesthetic laser equipment and phototherapy systems.
760nm 300W Unmounted QCW Chip Laser Diode

 

This 250W 808nm NIR QCW laser chip is a single bar diode chip featuring 49 emitters, 8% max duty cycle and spectrum width less than 6nm. It delivers reliable quasi-continuous high-power output, making it a preferred pumping chip for solid-state lasers, laser thermal processing and medical laser systems.

 

Specification:

Item No.: LC808SB250

Optical

Typ

Central Wavelength

808nm

Wavelength Tolerance ±10nm

Output Power

250W

Working Mode

QCW

Pulse Width 200us
Rep.rate 400Hz
Duty Cycle 8.00%
Filling Factor 75%

Emitter Width

100μm

Emitter Pitch

200μm

Emitter Quantity

49

Bar Width

10mm

Cavity Length

1.5mm

Bar Thickness

130μm

Electrical

 

Operating Current Iop

<300A

Threshold Current Ith

30A

Operating Voltage Vop

2.0V

Thermal

 

Operating Temperature

25℃

Storage Temperature 0~+55℃

Wavelength Temperature Coefficient

0.3nm/℃

 

 

 

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