75W 905nm Diode Laser Chips

75W 905nm Diode Laser Chips

75W 905nm Single Emitter Unmounted Laser Bar on Submount Package
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Description

75W 905nm Diode Laser Chips

 

Quick details:

A 4-layer light-emitting section is used, with a light-emitting size of 300μm x 16μm, and a photoelectric conversion efficiency of 41%.

The fast axis divergence angle is 30 degrees, and the slow axis divergence angle is 10 degrees.

It is particularly worth noting that this chip has excellent high temperature resistance.

The temperature test at 25 ° C to 125 ° C is heavy. For every 10 ° C increase, the power is reduced by 4%.

Applications:

Laser Lidar

Medical application

Laser lighting

Free space optical communication.

Industrial pumping

Single Emitter Laser Chip

 

 

Data sheet:

Item No.: LC905SM75

Operation  
Center Wavelength 905nm
Output Power 75W
Operation Mode QCW
Geometrical  
Emitter Width 135um
Cavity Length 1000um
Cavity Thickness 125um
Cavity Width 400um
Electro Optical Data  
Threshold Current 0.68A
Operating Current 20A
Operating Voltage 6.3V
Slope Efficiency 3.2W/A
Slow Axis Divergence 9
Fast Axis Divergence 27
Spectral Width 4nm
Polarization TE

 

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