Description
15W 915nm Diode Laser Chips
Product Description
The basic materials of laser chips mainly include gallium arsenide (GaAs), indium phosphide (InP) and gallium nitride (GaN), etc. These materials have the advantages of wide wavelength coverage, small size, stable structure, diverse pumping methods, high yield, good reliability, and easy high-speed modulation, which makes laser chips have broad application prospects in applications
Features:
Chip on submount design P Down sealed package
High stability Long lifetime
High reliability AuSn bonding
RoHS compliance
Data sheet:
Item No.: LC915SE15
| Optical | |
| Center Wavelength | 915nm |
| Output Power | 15W |
| Spectral Width FWHM | 3.5nm |
| Slope Efficiency | 1.0W/A |
| Fast Axis Divergence | 28Deg |
| Slow Axis Divergence | 8Deg |
| Polarization Mode | TE |
| Emitter Size | 94um |
| Electrical | |
| Threshold Current | 0.55A |
| Operating Current | 15.5A |
| Operating Voltage | 1.65V |
| Power Conversion Efficiency | 58% |
| Thermal | |
| Operating Temperature | 15-55℃ |
| Storage Temperature | 0-80℃ |
| Wavelength Temp. Coefficient | 0.3nm/℃ |
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