3W 808nm Single Emitter Laser Chip

3W 808nm Single Emitter Laser Chip

Item No.:LC808SE3
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Description

3W 808nm Single Emitter Laser Chip


3W 808nm Single Emitter Laser Chip model number is LC808SE3, with a light strip width of 150μm, cavity length of 1mm, photoelectric conversion efficiency of 60%, and service life of more than 10,000 hours. In addition, the chip also uses new epitaxial structure design and material epitaxy, advanced non-pump window design and preparation technology, dry and wet corrosion combined with self-alignment technology, control the consistency of strip width, especially to ensure high yield under mass production, reduce the cost of laser chip. At the same time, the adoption of new technology has greatly improved the high temperature resistance characteristics, so that 3W 808nm Single Emitter Laser Chip can be in the environment temperature of 60℃ or even higher temperature under the condition of continuous operation.


Application:

Fiber Laser Pumping Source

Soild-state Laser Pumping Source

Direct Semiconductor Laser

60W 1064nm Unmounted Laser Bar


Data sheet:

Item No.: LC808SE3

Optical
Center Wavelength 808nm
Output Power 3W
Working Mode
CW
Spectral Width FWHM 2nm
Slope Efficiency
1.2W/A
Fast Axis Divergence 35Deg
Slow Axis Divergence 9Deg
Polarization Mode TE
Electrical
Threshold Current 0.4A
Operating Current 2.8A
Operating Voltage 1.75V
Power Conversion Efficiency 60%
Thermal
Operating Temperature 15-35℃
Wavelength Temp. Coefficient 0.28nm/℃


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