3W 808nm Single Emitter Laser Chip
3W 808nm Single Emitter Laser Chip model number is LC808SE3, with a light strip width of 150μm, cavity length of 1mm, photoelectric conversion efficiency of 60%, and service life of more than 10,000 hours. In addition, the chip also uses new epitaxial structure design and material epitaxy, advanced non-pump window design and preparation technology, dry and wet corrosion combined with self-alignment technology, control the consistency of strip width, especially to ensure high yield under mass production, reduce the cost of laser chip. At the same time, the adoption of new technology has greatly improved the high temperature resistance characteristics, so that 3W 808nm Single Emitter Laser Chip can be in the environment temperature of 60℃ or even higher temperature under the condition of continuous operation.
Application:
Fiber Laser Pumping Source
Soild-state Laser Pumping Source
Direct Semiconductor Laser
Data sheet:
Item No.: LC808SE3
Optical | |
Center Wavelength | 808nm |
Output Power | 3W |
Working Mode |
CW |
Spectral Width FWHM | 2nm |
Slope Efficiency |
1.2W/A |
Fast Axis Divergence | 35Deg |
Slow Axis Divergence | 9Deg |
Polarization Mode | TE |
Electrical | |
Threshold Current | 0.4A |
Operating Current | 2.8A |
Operating Voltage | 1.75V |
Power Conversion Efficiency | 60% |
Thermal | |
Operating Temperature | 15-35℃ |
Wavelength Temp. Coefficient | 0.28nm/℃ |
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