75W 905nm Pulse Single Emitter Laser Chip

75W 905nm Pulse Single Emitter Laser Chip

Item No:LC905SE75
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Description

75W 905nm Pulse Single Emitter Laser Chip

Product Description
 

The 75W 905nm Pulse Single Emitter Laser Chip belongs to EEL side emitting chip and supports single, triple and quadruple emitting nodes. The photoelectric conversion efficiency is 41%. Fast axis divergence Angle 30 degrees, slow axis divergence Angle 20 degrees. In particular, it is worth noting that this series of chips have excellent high temperature resistance, with a power reduction of 4% for every 10℃ increase in the test weight between 25℃ and 125℃, and has passed the stringent CE certification test.

 

Large-scale commercial lidar is just around the corner. The localization of laser chip will effectively help customers reduce costs and improve cost performance, and also have the advantages of short delivery time and fast service response. In the future, Brandnew will closely meet the market demand and develop more new products (low divergence Angle, low temperature drift, etc.).

140W 905nm Single Emitter Laser Chip
 

 

Data Sheet

Item No: LC905SE75

Item Name: 75W 905nm Pulse Single Emitter Laser Chip

Optical

Typ

Central Wavelength

905nm

Output Power

75W

Working Mode

QCW

Spectrum Width

4nm

Emitter Width

200μm

Cavity Length

750μm

Chip Width 400um

Thickness

150μm

Fast Axis Divergence 30Deg
Slow Axis Divergence 20Deg
Polarization Mode TE
Slope Efficiency 3W/A

Electrical

 

Operating Current Iop

31A

Threshold Current Ith

1.3A

Operating Voltage Vop

6.3V

Conversion Efficiency

40%

Pulse Width 100ns
Duty Cycle 0.01%
Repetition Frequency 1000Hz

Thermal

 

Operating Temperature

25℃

Wavelength Temperature Coefficient

0.31nm/℃

 

Drawing:

75w 905nm SE drawing

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