75W 905nm Pulse Single Emitter Laser Chip
The 75W 905nm Pulse Single Emitter Laser Chip belongs to EEL side emitting chip and supports single, triple and quadruple emitting nodes. The photoelectric conversion efficiency is 41%. Fast axis divergence Angle 30 degrees, slow axis divergence Angle 20 degrees. In particular, it is worth noting that this series of chips have excellent high temperature resistance, with a power reduction of 4% for every 10℃ increase in the test weight between 25℃ and 125℃, and has passed the stringent CE certification test.
Large-scale commercial lidar is just around the corner. The localization of laser chip will effectively help customers reduce costs and improve cost performance, and also have the advantages of short delivery time and fast service response. In the future, Brandnew will closely meet the market demand and develop more new products (low divergence Angle, low temperature drift, etc.).

Data Sheet
Item No: LC905SE75
Item Name: 75W 905nm Pulse Single Emitter Laser Chip
|
Optical |
Typ |
|
Central Wavelength |
905nm |
|
Output Power |
75W |
|
Working Mode |
QCW |
|
Spectrum Width |
4nm |
|
Emitter Width |
200μm |
|
Cavity Length |
750μm |
| Chip Width | 400um |
|
Thickness |
150μm |
| Fast Axis Divergence | 30Deg |
| Slow Axis Divergence | 20Deg |
| Polarization Mode | TE |
| Slope Efficiency | 3W/A |
|
Electrical |
|
|
Operating Current Iop |
31A |
|
Threshold Current Ith |
1.3A |
|
Operating Voltage Vop |
6.3V |
|
Conversion Efficiency |
40% |
| Pulse Width | 100ns |
| Duty Cycle | 0.01% |
| Repetition Frequency | 1000Hz |
|
Thermal |
|
|
Operating Temperature |
25℃ |
|
Wavelength Temperature Coefficient |
0.31nm/℃ |
Drawing:

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