1W 660nm C-Mount Laser Diode

1W 660nm C-Mount Laser Diode

Emitter Size 150x1um
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 1w 660nm c-mount laser diode. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

1W 660nm C-Mount Laser Diode


Features:

1W output power at around 660nm

Other wavelengths within 660-1064nm are optional

Proprietary mirror coating enables high reliability

Au/Sn bonding of chip to c-mount open heatsink

RoHS compliance

Optional 9mm TO-can package for QCW operation


Additional Info:

Absolute Maximum Ratings may be applied to the Device for short period of time only. Exposure to maximum ratings for extended period of time or exposure above one or more max ratings may cause damage or affect the reliability of the Device.

C-Mount Laser Diodes



Drawing:


W5KBN[FVRG_HZ}N46TOANM7


Data sheet:

Item No.:CM660DL1

Optical
Center Wavelength 660±5nm
Output Power 1W
Emitter Size 150x1um
Polarization Mode TE
Slope Efficiency ≥1.1W/A
Electrical
Operating Current Iop ≤1.5A
Threshold Current Ith ≤0.5A
Operating Voltage Vop ≤2.2V
Power Conversion Efficiency ≥35%
Thermal
Operating Temperature 15~35℃
Storage Temperature -40~80℃




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