Wavelength Stabilized 785nm Laser Diode For Raman Spectroscopy

Wavelength Stabilized 785nm Laser Diode For Raman Spectroscopy

Item No.: FC785WS06
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced wavelength stabilized 785nm laser diode for raman spectroscopy. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

Wavelength Stabilized 785nm Laser Diode for Raman Spectroscopy

 

Features:

Volume Bragg Grating Stabilized

Spectral Width: <0.1nm

With PD, Thermistor, TEC functions

Fiber core: 105 μm, 0.22NA

FC/PC or SMA905 Fiber Connector optional

Fiber length can be customized

 

Applications:

Raman Spectroscopy

Analytical Instruments

Biological Research

785NM

 

Spec sheet:

Item No.: FC785WS06

Optical  
Center Wavelength λ 785nm
Wavelength Tolerance ±0.5nm
Output Power 600mW
Spectral Width FWHM 0.1nm
Slope Efficiency 0.8W/A
Fiber  
Fiber Core Diameter 105um
Fiber Numerical Aperture 0.22NA
Fiber Connector FC/PC,SMA905
Electrical  
Operating Current Iop 1.09A
Threshold Current Ith 0.36A
Operating Voltage Vop 2V
PD <2000μA
Thermistor 10 (±5%) kΩ (@25℃)
TEC Working Current/Voltage 2.5A/6.3V
Thermal  
Operating Temp. 15~35℃
Storage Temp. -20~50℃
Wavelength Temperature Coefficient 0.01nm/℃

 

Drawing

WMR}QLLI4A[61KLJSV[8]AV

 

ESD PROTECTION – Electrostatic discharge is the primary cause of unexpected product failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling the product.

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