2W 808nm COS AuSn Bonding Laser Diode

2W 808nm COS AuSn Bonding Laser Diode

Item No: COS808KZ2
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Description

2W 808nm COS AuSn bonding Laser Diode

 

Features:

  • Chip on submount design
  • High stability, Long lifetime
  • High reliability, AuSn bonding
  • RoHS compliance

Application:

  • Medical
  • Printing
  • Industry
  • Pumping
COS
  1. BrandNew delivers diode lasers employing professional coupling technology, that enjoy multiple advantages, e.g., compact design, stable output power, high power, high efficiency and convenient packaging.
  2. These laser diode modules can provide solutions for fiber laser applications and direct suppliers.
  3. The performance and aging tests have been performed upon the production line to guarantee reliable, stable and long lifetime of products.
  4. To provide customers with high-quality, high cost performance products is the company's goal.

 

 

Specification

Item Number: COS808KZ2

Optical  
Center Wavelength 808nm±10nm
Output Power 2W
Emiter Width 50um
Electrical  
Threshold Current Lth 0.25A
Operating Current Lop 2A
Operating Voltage Vop 1.9V
Thermal  
Test Temp. 25℃
Wavelength Temperature Coefficient 0.35nm/℃

Drawing:

COS 808nm

 

For typical P-side-up CoS die bonding, the critical CoS dimension, OH, for HPLD die bonding is the laser chip overhang of A (emitter surface line) to C (AuSn surface line).

product-683-433

 

 

 

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