200W 808nm Unmounted Diode Laser Bar

200W 808nm Unmounted Diode Laser Bar

single bar laser chip QCW
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 200w 808nm unmounted diode laser bar. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

200W 808nm Single Bar Laser Diode Chips,QCW, Bare Chips not bonded on Submount

Product overview:This product is widely used in industrial processing, medical, printing, scientific research, lighting, laser display and other fields.We can provide customers with high-power, long-life, Large Quatity, OEM design of different power, different wavelengths of laser chips, also customized needed.



Operation:
Central Wavelength 808nm
Optical output power 200W
Operation mode CW
Power modulation 100%
Geometrical:
Numbers of Emitters 60
Emitter Width 120um
Emitter Pitch 160um
Filling Factor 75%
Bar Width 10000um
Cavity Length 1000um
Thickness 125um
Electro Optical Data:
Fast Axis Divergency (FWHM) 39deg
Slow Axis Divergency (FWHM) 10deg
Spectral Bandwidth (FWHM) 4nm
Pulse Wavelength 803nm
Slope Efficiency 1.2W/A
Conversion Efficiency 50%
Threshold Current 1.9~2A
Operating Current 150~160A
Operating Voltage 1.9~2.1V
Temperature Characteristics 0.28nm/℃
Polarization TE
LD Operating Temperature 25℃








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