2W 830nm Diode Laser Chips

2W 830nm Diode Laser Chips

2W 830nm Single-emitter SE Bare Laser Bar
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Description

2W 830nm Diode Laser Chips

overview

 

Feature:

high temperature resistance characteristics

COS Packaging Available

Unique technology for highest reliability and lifetime

Low beam divergence and small light emitting aperture

Application:

Special design for printing application

Semiconductor laser modules

Material processing

Dermatology and surgery.

Free space optical communication

20W 976nm Unmounted Laser Bar

Note: ESD PROTECTION – Electrostatic discharge is the primary cause of unexpected product failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling the product.

 

 

Data sheet:

Item No.: LC830SM2

Optical  
Center Wavelength 830nm
Output Power 2W
Spectral Width FWHM 3nm
Emitter Size 40um
Slope Efficiency 1.2W/A
Fast Axis Divergence 35Deg
Slow Axis Divergence 10Deg
Polarization Mode TE
Electrical  
Threshold Current 0.3A
Operating Current 2A
Operating Voltage 1.8V
Thermal  
Operating Temperature 25℃
Wavelength Temp. Coefficient 0.28nm/℃

 

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