Description
8W 976nm CW Single Emitter Diode Laser Chip
Overview:
8W output power, 976nm central wavelength
CW working mode, 1 emitter on the chip, TE polarization mode
The conversion efficiency of our chip can reach 60%
New epitaxial structure design and material epitaxy
Advantage:
Long lifetime>10000 hours
High Reliability and stability
Single Emitter Laser Chip
Application:
Fiber laser pumping source
Autonomous Driving Lidar
Direct Semiconductor Laser
Laser illumination
Data Sheet
Item No: LC976SE8
Item Name: 8W 976nm CW Single Emitter Diode Laser Chip
| Optical | Min | Typ | Max |
| Central Wavelength | 966nm | 976nm | 986nm |
| Output Power | 8W | ||
| Working Mode | CW | ||
| Spectrum Width | 3nm | ||
| Number of Emitter | 1 | ||
| Emitter Width | 95um | ||
| Emitter Pitch | 400um | ||
| Filling Factor | 50% | ||
| Cavity Length | 3990 | 4000um | 4010 |
| Thickness | 110um | 130um | 150um |
| Fast Axis Divergence(FWHM) | 36Deg | 40Deg | |
| Slow Axis Divergence (FWHM) | 10Deg | 12Deg | |
| Polarization Mode | TE | ||
| Slope Efficiency | 0.95W/A | 1W/A | |
| Electrical | |||
| Operating Current Iop | 10A | 11A | |
| Threshold Current Ith | 0.7A | 1A | |
| Operating Voltage Vop | 1.75V | 2V | |
| Conversion Efficiency | 54% | 58% | |
| Thermal | |||
| Operating Temperature | 15℃ | 25℃ | 35℃ |
| Wavelength Temperature Coefficient | 0.28nm/℃ |
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