Description
High Power Diode Laser Chips
Product Description
Compared with traditional lasers, high power diode laser chips have the advantages of small size, high power, high efficiency and long life. This is because high-power laser chips adopt an integrated design, integrating various components of the laser directly on the chip, and adopting advanced heat dissipation technology, which greatly improves the power output and efficiency of the laser
Application:
Semiconductors for high-power diode lasers in direct material processing, for heating or lighting.
Semiconductors as pumping sources for fiber and solid-state lasers.
Use in printing technology.
Esthetics, dermatology and surgery.
Spec Sheet:
| Operation: | ||
| Central Wavelength | 808nm | |
| Optical output power | 200W | 300W |
| Operation mode | QCW | |
| Power modulation | 100% |
| Geometrical: | ||
| Numbers of Emitters | 60 | |
| Emitter Width | 120um | |
| Emitter Pitch | 160um | |
| Filling Factor | 75% | |
| Bar Width | 10000um | |
| Cavity Length | 1500um | |
| Thickness | 125um |
| Electro Optical Data: | ||
| Fast Axis Divergency (FWHM) | 39deg | |
| Slow Axis Divergency (FWHM) | 12deg | |
| Spectral Bandwidth (FWHM) | 4nm | |
| Pulse Wavelength | 803nm | |
| Slope Efficiency | 1.2W/A | |
| Conversion Efficiency | 55% | |
| Threshold Current | 25A | 30A |
| Operating Current | 190A | 280A |
| Operating Voltage | 1.9~2.1V | |
| Temperature Characteristics | 0.28nm/℃ | |
| Polarization | TE | |
| LD Operating Temperature | 25℃ |
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