Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced high power diode laser chips. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
High Power Diode Laser Chips
Compared with traditional lasers, high power diode laser chips have the advantages of small size, high power, high efficiency and long life. This is because high-power laser chips adopt an integrated design, integrating various components of the laser directly on the chip, and adopting advanced heat dissipation technology, which greatly improves the power output and efficiency of the laser
Application:
Esthetics, dermatology and surgery.
Spec Sheet:
| Operation: | ||
| Central Wavelength | 808nm | |
| Optical output power | 200W | 300W |
| Operation mode | QCW | |
| Power modulation | 100% |
| Geometrical: | ||
| Numbers of Emitters | 60 | |
| Emitter Width | 120um | |
| Emitter Pitch | 160um | |
| Filling Factor | 75% | |
| Bar Width | 10000um | |
| Cavity Length | 1500um | |
| Thickness | 125um |
| Electro Optical Data: | ||
| Fast Axis Divergency (FWHM) | 39deg | |
| Slow Axis Divergency (FWHM) | 12deg | |
| Spectral Bandwidth (FWHM) | 4nm | |
| Pulse Wavelength | 803nm | |
| Slope Efficiency | 1.2W/A | |
| Conversion Efficiency | 55% | |
| Threshold Current | 25A | 30A |
| Operating Current | 190A | 280A |
| Operating Voltage | 1.9~2.1V | |
| Temperature Characteristics | 0.28nm/℃ | |
| Polarization | TE | |
| LD Operating Temperature | 25℃ |
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