Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 1064nm 600mw chip single emitter diode laser. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
600mW 1064nm Single Emitter Chip Laser
Features:
- 1064nm infrared wavelength with 600mW stable output
- 250μm chip width and 4000μm cavity length
- 5nm Single emitter structure ensures excellent beam quality
Applications:
- Laser Pumping: Core chip for small-scale Yb-doped fiber lasers and solid-state lasers
- Optical Amplification: Applied in low-power optical fiber amplifiers (EDFAs)
- Micro-Material Processing: Integrated into compact laser modules for PCB drilling, thin-film scribing
- Laboratory R&D: Ideal for testing laser chip performance, optimizing cavity design
The 600mW 1064nm single emitter laser chip features a 250μm width and 4000μm cavity length, delivering stable mid-power output and high beam quality. Its optimized structural parameters ensure efficient energy conversion and reliable operation, making it a key component for laser pumping, optical amplification, micro-processing and laboratory research applications.
Data Sheet
Item No: LC1064SE06
| Optical | Min | Typ | Max | Unit |
| Center Wavelength | 1054 | 1064 | 1074 | nm |
| Output Power | 600 | mW | ||
| Working Mode | CW | |||
| Spectrum Width | 5 | nm | ||
| Emitter Width | 3 | um | ||
| Chip Width | 250 | um | ||
| Cavity Length | 4000 | um | ||
| Chip Thickness | 90 | um | ||
| Fast Axis Divergence(FWHM) | 35 | 40 | Deg | |
| Slow Axis Divergence(FWHM) | 9 | 11 | Deg | |
| Polarization Mode | TE | |||
| Slope Efficiency | 0.9 | W/A | ||
| Electrical | ||||
| Operating Current Iop | 850 | mA | ||
| Threshold Current Ith | 200 | mA | ||
| Operating Voltage Vop | 1.8 | V | ||
| Conversation Efficiency | 40 | % | ||
| Thermal | ||||
| Test Temperature | 25 | ℃ | ||
| Wavelength Temperature Coefficient | 0.35 | nm/℃ |
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