500mW 850nm VCSEL Diode

500mW 850nm VCSEL Diode

850nm Multimode VCSEL
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Description

500mW 850nm VCSEL Diode

Product Description

Vertical Cavity Surface Emitting Laser (VCSEL) is a semiconductor laser whose laser emission direction is perpendicular to the P-N junction plane and whose resonant cavity plane is parallel to the P-N junction plane. It is a type of surface emitting laser. The light of EEL edge emitting laser is emitted horizontally from the edge of the chip. Compared with EEL, VCSEL has a more economical production process and a faster response, so it has replaced traditional edge emitting lasers in more and more applications.

Features

High Efficiency (WPE), >35% @50C

Small emission area

Modulation bandwidth >1Gbps

Applications

3D Imaging
Gesture Recognition
Laser Illumincation
Medical applications
Broadband acesss nework
Pump

1W 850nm VCSEL Diode
 

 

Characteristics

Parameter Typ.
Center Wavelength 850±10nm
Output Power 500mW
Threshold Current 0.4A
Forward Current 2.7A

Power Conversion Efficiency

36%
Slope Efficiency 0.96W/A
Die Size 960×950um
Laser Forward Voltage 2.25V
Series Resistance 0.83Ω
Beam Angle 20Degrees
Wavelength Temp. Drift 0.07nm/℃
Soldering Temperature 260(5s)℃
Substrate Cu/Ag
Case Operating Temp 20℃
Storage Temp 20℃

 

Mechanical Schematics

 

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