905nm TO-Mount Laser Diode
Features:
• Multi-epitaxial luminous layer stack structure.
• The luminous aperture is 200 mu m by 10 mu m.
• Large optical cavity LOC high power material structure.
• Narrow beam divergence.
• High laser power density.
• Laser rangefinder.
• traffic surveillance and vigilance.
• infrared illumination.
• Laser radar.
Datasheet:
Optical
Center Wavelength λ 905nm
Wavelength Tolerance ±10nm
Output Power 75W
Spectrum FWHM 7nm
Fast Axis Divergence 25Degree
Slow Axis Divergence 11Degree
Beam Size 200x10um
Electrical
Operating Current Iop 30A
Threshold Current 0.75A
Forward Current 24V
Pulse Width 200ns
Repetition Frequency 5KHz
Duty Cycle 0.10%
Reverse Voltage 3V
Thermal
Operating Temperature -15~85℃
Storage Temperature -40~100℃
Wavelength temperature coefficient 0.28nm/ºC
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