1W 850nm VCSEL SMD Diode with PD
Overview
Features:
850nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical applications
Proximity sensors
Circular output beam
Unlike edge-emitters, 1W 850nm VCSEL SMD Diode with PD emit in a circularly symmetric beam with low divergence without the need for additional optics. This has been a tremendous advantage for low-power VCSELs in the telecom and datacom markets because of their ability to directly couple to fibers ("butt-coupling") with high coupling efficiency. 1W 850nm VCSEL SMD Diode with PD emit in a quasi-top-hat beam profile, making these devices ideal for direct pumping ("butt-pumping") of solid-state lasers.
Characteristics
| Parameter | Typ. |
| Center Wavelength | 850±10nm |
| Output Power | 1W |
| Threshold Current | 0.15A |
| Forward Current | 1.3A |
|
Power Conversion Efficiency |
35% |
| Slope Efficiency | 0.87W/A |
| Emission Area | 354×355um |
| Laser Forward Voltage | 2.2V |
| Series Resistance | 0.71Ω |
| Beam Angle | 18Degrees |
| Wavelength Temp. Drift | 0.07nm/℃ |
| Soldering Temperature | 260(10s)℃ |
| Substrate | AIN |
| Case Operating Temp | -40-85℃ |
| Storage Temp | -40-105℃ |
Mechanical Schematics
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