Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced high power 808nm diode laser stack. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
High Power 808nm Diode Laser Stack
Features:
High laser output power
High Power 808nm Diode Laser Stack significantly increase the output power of lasers by combining the beams of multiple laser units into a single beam. This technology uses mirrors to combine the beams emitted by different chips into the same direction and close position for output, so that when all the beams are combined into one beam, the quality of the beam in the fast axis direction remains unchanged, but the multiple beams in the slow axis direction are closely arranged. , increasing the optical parameter product in the slow axis direction, thereby increasing the laser output power
High laser brightness
Through wavelength combining technology, laser beams of different wavelengths are combined into one optical path, which not only does not change the quality of the beam, but also doubles the output power, thereby greatly increasing the brightness of the laser. This technology is achieved through wavelength combiners such as bandpass or high-pass and low-pass formed by coating, ensuring the stability of beam quality and the improvement of brightness.

Data sheet
Item No.:WC808VS1600
| Optical | |
| Center Wavelength | 808nm |
| Wavelength Tolerance | ±10nm |
| Working Mode | QCW |
| Output Power | 1600W |
| Number of Bars | 32 |
| Fast Axis Divergence(FWHM) | 38Deg |
| Slow Axis Divergence(FWHM) | 12Deg |
| Electrical | |
| Operating Current | 50A |
| Threshold Current | 10A |
| Operating Voltage | 57V |
| Thermal | |
| Operating Temperature | 20~30℃ |
| Storage Temperature | 0-55℃ |
Package Drawing
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