High Power 808nm Diode Laser Stack

High Power 808nm Diode Laser Stack

2*16 32bars, totally 1600W
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced high power 808nm diode laser stack. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

High Power 808nm Diode Laser Stack

Features:

 

High laser output power

High Power 808nm Diode Laser Stack significantly increase the output power of lasers by combining the beams of multiple laser units into a single beam. This technology uses mirrors to combine the beams emitted by different chips into the same direction and close position for output, so that when all the beams are combined into one beam, the quality of the beam in the fast axis direction remains unchanged, but the multiple beams in the slow axis direction are closely arranged. , increasing the optical parameter product in the slow axis direction, thereby increasing the laser output power‌

High laser brightness

Through wavelength combining technology, laser beams of different wavelengths are combined into one optical path, which not only does not change the quality of the beam, but also doubles the output power, thereby greatly increasing the brightness of the laser. This technology is achieved through wavelength combiners such as bandpass or high-pass and low-pass formed by coating, ensuring the stability of beam quality and the improvement of brightness.

32bars-1

Data sheet

Item No.:WC808VS1600

 

Optical  
Center Wavelength 808nm
Wavelength Tolerance ±10nm
Working Mode QCW
Output Power 1600W
Number of Bars 32
Fast Axis Divergence(FWHM) 38Deg
Slow Axis Divergence(FWHM) 12Deg
Electrical  
Operating Current 50A
Threshold Current 10A
Operating Voltage 57V
Thermal  
Operating Temperature 20~30℃
Storage Temperature 0-55℃


 

Package Drawing

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