Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 100w 808nm laser diode bar g-stack. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
100W 808nm Laser Diode Bar G-Stack
Horizontal stacked laser diodes consist of numerous diode laser bars arranged side-by-side. These stacked arrays can be built with 2 to 20 diode bars of 100 W QCW to 300 W QCW. BrandNew still offers mixing diode bars of different wavelength to give a broad optical spectrum of emission, which performance is well suited for building efficient pumping skim in a non-stabilized environment in temperature.
Overview
Feature:
one bar
Working mode: QCW
Conduction cooled
Horizontal stack
These arrays are available over a wide range of standard wavelengths, and can be packaged on nearly all Brandnew laser diode array platforms, including G and Cs packages.
Applications:
Applications as wide ranging as solid-state laser pumping, directed energy weapons, military range finding and target designation, hair removal, and welding, all benefit from the high power and flexible configurations offered by these stacks
Data sheet:
Item No.: CC808HA100
| Optical | |
| Center Wavelength | 808±10nm |
| Output Power | 100W |
| Working Mode | QCW |
| Fast Axis Divergence(FWHM) | 50Deg |
| Slow Axis Divergence(FWHM) | 10Deg |
| Spectral Width FWHM | 6nm |
| Frequency | 3hz |
| Pulse Width | 4ms |
| Duty Cycle | ＜2% |
| Electrical | |
| Operating Current Iop | 100A |
| Threshold Current Ith | 15A |
| Operating Voltage Vop | 2V |
| Power Conversion Efficiency | 50% |
| Thermal | |
| Operating Temperature | -45-+60℃ |
| Storage Temperature | -55-+85℃ |
Package drawing:
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