100W 808nm Laser Diode Bar G-Stack

100W 808nm Laser Diode Bar G-Stack

Item No.: CC808HA100
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Description

100W 808nm Laser Diode Bar G-Stack

Product Description
 

Horizontal stacked laser diodes consist of numerous diode laser bars arranged side-by-side. These stacked arrays can be built with 2 to 20 diode bars of 100 W QCW to 300 W QCW. BrandNew still offers mixing diode bars of different wavelength to give a broad optical spectrum of emission, which performance is well suited for building efficient pumping skim in a non-stabilized environment in temperature.

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Overview

 

Feature:

one bar

Working mode: QCW

Conduction cooled

Horizontal stack

These arrays are available over a wide range of standard wavelengths, and can be packaged on nearly all Brandnew laser diode array platforms, including G and Cs packages.

Applications:

Applications as wide ranging as solid-state laser pumping, directed energy weapons, military range finding and target designation, hair removal, and welding, all benefit from the high power and flexible configurations offered by these stacks

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Data sheet:

Item No.: CC808HA100

 

Optical  
Center Wavelength 808±10nm
Output Power 100W
Working Mode QCW
Fast Axis Divergence(FWHM) 50Deg
Slow Axis Divergence(FWHM) 10Deg
Spectral Width FWHM 6nm
Frequency 3hz
Pulse Width 4ms
Duty Cycle <2%
Electrical  
Operating Current Iop 100A
Threshold Current Ith 15A
Operating Voltage Vop 2V
Power Conversion Efficiency 50%
Thermal  
Operating Temperature -45-+60℃
Storage Temperature -55-+85℃

 

Package drawing:

 

 

J{~XP~1949(52P[1E6N77AP

 

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