Description
Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 300w 808nm horizontal stack diode laser gs. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
300W 808nm Horizontal Stack Diode Laser GS
Features:
- 300W 808nm Diode Laser
- G-stack
- High Quality
- High Efficiency
Application:
- Flat panel display
- Spectroscopy
- Shockwave generation
- Laser marking, Laser pumping
- 300W 808nm Conduction Cooled Horizontal Stack Diode Laser with QCW working mode.
- Packaging and heat-sinks have been optimized to reduce overall thermal resistance.
- Using AuSn hard solder, the stacks are assembled in a compact and rugged package.
- This allows easy connection to a heat exchanger to achieve excellent thermal control.
Specification
Item No.: CC808HA300
Item Name: 300W 808nm QCW Conduction Cooled Horizontal Stack Diode Laser
| Optical | |
| Center Wavelength λ | 808nm |
| Wavelength Tolerance | ±5nm |
| Working Mode | QCW |
| Output Power Per Bar | 100W |
| Number of Bars | 3 |
| Fast Axis Divergence(FWHM) | 40Deg |
| Slow Axis Divergence (FWHM) | 10Deg |
| Pulse Width | 400us |
| Frequency | 25Hz |
| Duty Cycle | <1% |
| Electrical | |
| Operating Current Iop | 100A |
| Threshold Current Ith | 15A |
| Operating Voltage Vop | <6V |
| Thermal | |
| Operating Temperature (No Condensation) | 25℃ |
| Storage Temperature (No Condensation) | -55-+85℃ |
Product Size Drawing:
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