808nm 600W QCW 5 Bars G-Stack Laser Diode
808nm 600W QCW 5 Bars G-Stack Laser Diode have the characteristics of high output power, excellent thermal management capabilities and excellent reliability. By stacking multiple chips together, they greatly increase the output power of the laser and can quickly dissipate the heat generated by the dual chips, ensuring product reliability and reducing production costs. In addition, horizontal stacked lasers are also widely used in industrial material processing, solid laser pumping and scientific research, such as using Nd crystals to achieve high-power laser output, and have broad application prospects in laser radar ranging, communications, 3D imaging and other fields
Bar 1= center 803 nm +/- 1 at 65 degree C
Bar 2= center 806 nm +/- 1 at 65 degree C
Bar 3= center 809 nm +/- 1 at 65 degree C
Bar 4= center 812 nm +/- 1 at 65 degree C
Bar 5= center 815 nm +/- 1 at 65 degree C
Data sheet:
Item No.: CC808HA600
| Optical | Typical Value |
| Center Wavelength | 808±10nm |
| Output Power | 600W |
| Quantity of Bars | 6 |
| Working Mode | QCW |
| Fast Axis Divergence(FWHM) | 38Deg |
| Slow Axis Divergence(FWHM) | 12Deg |
| Frequency | 100Hz |
| Pulse Width | <200us |
| Duty Cycle | <2% |
| Electrical | |
| Operating Current Iop | 100A |
| Threshold Current Ith | 15A |
| Operating Voltage Vop | 12V |
| Thermal | |
| Operating Temperature | 25℃ |
| Storage Temperature | 0-55℃ |
Package drawing:
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