Description
150mW 940nm VCSEL Laser Chip
Materials and Structures
substrate: GaAs
p-metallization: Au alloy
n-metallization: Au alloy
epitaxial structure: InGaAs MQWs
Characteristics
| Parameter | Typ. |
| Center Wavelength | 940±10nm |
| Output Power | 150mW |
| Forward Voltage | 1.9V |
| Slope Efficiency | 0.9W/A |
| Dominant Wavelength | 42.6% |
| Wavelength Temp. Coefficient | 0.07nm/℃ |
| Reverse Current | 1uA |
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