160mW 1310nm High Power Narrow Linewidth DFB Diode Laser Chip

160mW 1310nm High Power Narrow Linewidth DFB Diode Laser Chip

Item No:LC1310DFB016
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Description

160mW 1310nm High Power Narrow Linewidth DFB Diode laser Chip

 

Features:

  • Single Longitudinal Mode (DFB structure): Stable wavelength emission with low noise
  • Compact Chip Design: Ideal for integration into TO-can, butterfly, or custom packaging
  • High Reliability: Proven performance for long-term continuous operation
  • RoHS Compliant
  • Operating case temperature: 0~75℃
 

Applications:

  • Microwave Photonics
  • Optical Test and Instrumentation
  • FMCW LIDAR
  • Optical Sensing
905nm laser chip

Data Sheet

Item No: LC1310DFB016

Item Name: 905nm 280W Single Bar Laser Chip

Optical

Typ

Central Wavelength

1310nm

Output Power

160mW

Spectral Linewidth

250KHz

Slope Efficiency 0.3W/A
Beam Diverence Angle, Vertical 21Deg
Beam Diverence Angle, Horizontal 13Deg

Electrical

Laser diode forward current

450mA

Laser diode reverse Voltage

1A

Operating Voltage Vop

10V

Conversion Efficiency

40%

Duty Cycle 0.010%
Repetition Frequency 5000Hz

Thermal

 

Operating Temperature

75℃

Storage temperature

-40~+100℃

 

Drawing:

3W 1064nm Bare Laser Chip

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