300W 801nm Diode Laser Chips Bar
300W 801nm Diode Laser Chips Bar with 60 emitters, it offers 75% fill factor, producing up to 300W QCW laser output power at 940 nm wavelength. Bar Width 10000μm；Cavity Length 1500μm；Thickness 130μm
This is the most stable, most efficient and inexpensive way to produce high quality laser beams.
Feature
801nm center wavelength with 2nm tolerance
0.35nm/℃ wavelength temperature coefficient
Long working lifetime over 10000hours
High reliability and stability
Application
Medical
Scientific
Fiber source
Data sheet:
Item No.: LC801SB300
|
Optical |
Typ |
|
Central Wavelength |
801nm |
|
Output Power |
300W |
|
Working Mode |
QCW |
|
Spectrum Width |
4nm |
|
Number of Emitter |
60 |
| Fast Axis Divergence(FWHM) | 39Deg |
| Slow Axis Divergence(FWHM) | 12Deg |
| Polarization Mode | TE |
| Slope Efficiency | 1.2W/A |
|
Electrical |
|
|
Operating Current Iop |
280A |
|
Threshold Current Ith |
30A |
|
Operating Voltage Vop |
1.9V |
|
Conversion Efficiency |
55% |
|
Thermal |
|
|
Operating Temperature |
25℃ |
|
Wavelength Temperature Coefficient |
0.3nm/℃ |
PIV Chart
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