50W 808nm Multi Emitter Laser Chip

50W 808nm Multi Emitter Laser Chip

Item No:LC808SB50
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 50w 808nm multi emitter laser chip. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

50W 808nm Multi Emitter Laser Chip

 

Product Description
 

50W 808nm Multi Emitter Laser Chip is unmounted laser bar. The laser bar can be regarded as a single laser bar formed by multiple single semiconductor emitters side by side, which is called a bar. In essence, it is formed by building a series of single semiconductor laser emitters on the same substrate, which can also be called a linear array laser. Simply understood, multiple single emitters are arranged into one bar, and one bar can be divided into multiple single emitters.

The laser bar has higher luminous power due to its many luminous points, so it is often used as the pump source or direct luminescence of high-power fiber lasers and all solid state lasers. It is also widely used in medical, military and other fields. At present, the maximum power of a single laser tube in China can reach 20W, while the laser bar can achieve 300W or higher power output.

50W 808nm CW Single Bar Laser Chip
 

 

 

Data Sheet

Item No: LC808SB50

Optical  
Central Wavelength 808nm
Output Power 50W
Working Mode CW
Spectrum Width 4nm
Spectrum Width 19
Emitter Width 150um
Emitter Pitch 500um
Filling Factor 30%
Bar Width 10000um
Cavity Length 1000um
Cavity Length 125um
Fast Axis Divergence(FWHM) 39Deg
Slow Axis Divergence (FWHM) 9Deg
Polarization Mode TE
Slope Efficiency 1.15W/A
Electrical  
Operating Current Iop 48.5A
Threshold Current Ith 6A
Operating Voltage Vop 1.8V
Conversion Efficiency 57%
Thermal  
Operating Temperature 25℃
Wavelength Temperature Coefficient 0.28nm/℃

 

Drawing:

50w 808 LC Graph

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