Semiconductor High Power Diode Laser Chip

Semiconductor High Power Diode Laser Chip

Item No:LC808SB200
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced semiconductor high power diode laser chip. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

High Power 200W 808nm Semiconductor Diode Laser Chips For Material Processing

 

Features:

  • High power, high reliability and stability
  • QCW working mode, TE polarization mode
  • Efficient packaging heat dissipation technology
  • Long lifetime>10000 hours

Application:

  • Material processing,
  • Heating or lighting
  • Pumping sources for fiber and solid-state lasers
  • Use in printing technology
Semiconductor High Power Diode Laser Chip

 

High power 200W 808nm Single Bar Diode Laser Chip with high output power, QCW working mode. Using in many different field, such as industry, medical, material processing, heating and lighting etc. Our research staffs are constantly improving and innovating the processing technology in the producing process, based on the professional knowledge and experience accumulated in long-terms.

 

LASER CHIP

Data Sheet

Item No: LC808SB200

Item Name: Semiconductor High Power Diode Laser Chip

Operation
Center Wavelength 808nm
Output Power 200W
Operation Mode QCW
Polarization TE
Slope Efficiency 1.2W/A
Emitter Width 120um
Cavity Length 1500um
Cavity Thickness 120um
Cavity Width 160um
Electrical
Threshold Current 25A
Operating Current 190A
Operating Voltage 1.9V
Thermal
Operating Temperature 15~35℃
Wavelength Temperature Coefficient 0.28nm/℃

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