976nm High Power Laser Chip

976nm High Power Laser Chip

Item No:LC976SB200
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Description

High Power 200W 976nm Multi Emitter Single Bar Diode Laser For Material Processing

 

Features:

  • High output power, high brightness
  • Available With Any Mirco channel Cooled Configuration
  • Low beam divergence and small light emitting aperture
  • High power and high beam intensity IR laser radiation

Applications:

  • Industrial pumping, Laser illumination
  • Free space optical communication
  • Wind Sensing Lidar
  • Autonomous Driving Lidar
976nm High Power Laser Chip

High power 200W 976nm Single Bar Diode Laser Chip , unmounted diode laser bar, with 200W output power, designed for the most demanding applications.

 

 

Data Sheet

Item No: LC976SB200

Item Name: 976nm High Power Laser Chip

Optical
Central Wavelength 976nm
Output Power 200W
Working Mode CW
Spectrum Width 5nm
Number of Emitter 23
Emitter Width 200um
Emitter Pitch 400um
Filling Factor 50%
Bar Width 10000um
Cavity Length 4000um
Thickness 120um
Fast Axis Divergence(FWHM) 42Deg
Slow Axis Divergence (FWHM) 12Deg
Electrical
Operating Current Iop 100A
Threshold Current Ith 24A
Operating Voltage Vop 1.75V
Thermal
Operating Temperature 25℃
Wavelength Temperature Coefficient 0.35nm/℃

 

 

LASER CHIP

Operating Precautions:
Operating the diode laser outdoors at its maximum rating may result in an
equipment failure or a safety hazard. The power supply used with the component
The power supply used with the component must ensure that the maximum peak optical power is not exceeded.
power. Excessive drive current or transient switching may damage the CW diode laser.
Excessive drive current or switching transients can damage CW diode lasers. When using the power supply
When using the power supply, the diode laser should be connected with the mains power on and the output voltage zero.
The output voltage is zero. The current should
Slowly increase the current while monitoring the output power and drive current of the diode laser.
Drive current

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