4W 850nm VCSEL Laser Diode

4W 850nm VCSEL Laser Diode

850nm Multimode VCSEL
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Description

4W 850nm VCSEL Laser Diode

Product Description

VCSEL devices are widely used in 3D face recognition and distance sensing. When VCSEL arrays are used in TOF modules, especially dTOF systems such as LiDAR, the peak power, operating current, operating voltage, conversion efficiency, near-field and far-field optical characteristics of VCSEL in narrow pulse conditions are very important.

Features

Single wavelength

Low wavelength drift

Oxide isolation technology

Low threshold current

High reliability

Easy to collimate

Applications

3D sensors

Lidars

IR illuminations

Medical applications

Proximity sensors

850nm
 

Specifications:

Item No.: VC850SMD4

Item Name: 850nm 4W VCSEL Diode

Parameters Typ.
Optical Power 4W
Threshold Current 600mA
Forward Current 4.5A
Power Conversion Efficiency 39%
Slope Efficiency 1.03W/A
Die Size 960×950um
Peak Wavelength 850nm
Laser Forward Voltage 2.3V
Series Resistance 0.51Ω
Beam Angle 25Degrees
Wavelength Temp. Drift 0.07nm/℃
Soldering Temperature 320(10s)℃
Substrate Cu/Ag
Case Operating Temp -40~85℃
Storage Temp -40~105℃

 

LIV Graph and Wavelength

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Mechanical Schematics (unit:mm)

Q7_VH}~~0KF]DQBH_38L4BD

SMT reflow soldering curve

 

5SD82EUVT7`AI2S_W89DQJQ

 

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