300mW 808nm TO 9mm Laser Diode
The basis of 300mW 808nm TO 9mm Laser Diode includes a combination of laser diodes (LD) and transistor outlines (TO), where the laser diode is a semiconductor laser that generates stimulated radiation by injecting current into the semiconductor PN junction to achieve population inversion distribution, and then uses the positive feedback of the resonant cavity to achieve light amplification and generate laser oscillation
Features:
Output power: 100mW-500mW
TO 9mm Package
Other package C-Mount or F-Mount available
Narrow beam divergence.
High laser power density.
Data sheet:
Item No.: LD808TO300
Item Name: 300mW 808nm 9mm TO LD
| Optical | |
| Center Wavelength | 808nm |
| Wavelength Tolerance | ±5nm |
| Output Power | 300mW |
| Fast Axis Divergence | 35Deg |
| Slow Axis Divergence | 10Deg |
| Electrical | |
| Operating Current Iop | 300mA |
| Threshold Current Ith | 80mA |
| Working Voltage | 2V |
| LD Reverse Voltage | <2V |
| Slope efficiency | 1.1W/A |
| Thermal | |
| Operating Temperature | -40~70℃ |
| Storage Temperature | -40~80℃ |
Drawing:
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