Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced pulsed to ld at 905nm. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
Pulsed TO LD at 905nm
The device offers a far-field beam pattern with equivalent divergence values (8 x 8 degrees FWHM) for both the Fast (perpendicular) and the Slow (parallel) axes of emission. The adjusted far-field pattern offers higher coupling efficiency into standard spherical lens systems. Hermetically sealed in a robust 9mm package for survivability in harsh environmental conditions, the pulsed laser diode is well suited for demanding military tasks such as field-deployed range finders. The RoHS-compliant devices operates from 895nm to 915nm, with typical wavelength operation at 905nm. Peak power is 75W minimum, pulse width is 100ns typical and the drive current is typically 30A.
Application
• Laser rangefinder.
• traffic surveillance and vigilance.
• infrared illumination.
• Laser radar.
Data sheet
Item No.: TO905DL75
| Optical | |
| Center Wavelength | 900nm |
| Output Power | 75W |
| Spectrum FWHM | 7nm |
| Fast Axis Divergence | 25Deg |
| Slow Axis Divergence | 11Deg |
| Beam Size | 200x10um |
| Electrical | |
| Operating Current Iop | 30A |
| Threshold Current Ith | 0.75A |
| Pulse Width | 200ns |
| Repetition Frequency | 5kHz |
| Duty Cycle | 0.10% |
| Reverse Voltage | 3V |
| Thermal | |
| Operating Temperature | -15~85℃ |
| Storage Temperature | -40~100℃ |
| Wavelength temperature coefficient | 0.28nm/ºC |
Drawing:
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