200mW 850nm VCSEL TO Laser Diode

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 200mw 850nm vcsel to laser diode. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

Multimode 200mW 850nm VCSEL TO56 Laser Diode

Main features:

Multimode VCSEL

Low wavelength drift

Oxide Isolation Technology

High reliability

Easy to collimate

Advantage:

Temperature sensitivity of wavelength: The emission wavelength in 200mW 850nm VCSEL TO Laser Diode is ~5 times less sensitive to temperature variations than in edge-emitters. The reason is that in VCSELs, the lasing wavelength is defined by the optical thickness of the single-longitudinal-mode-cavity and that the temperature dependence of this optical thickness is minimal (the refractive index and physical thickness of the cavity have a weak dependence on temperature). On the other hand, the lasing wavelength in edge-emitters is defined by the peak-gain wavelength, which has a much stronger dependence on temperature. As a consequence, the spectral linewidth for high-power arrays (where heating and temperature gradients can be significant) is much narrower in VCSEL arrays than in edge-emitter-arrays (bar-stacks). Also, over a 20oC change in temperature, the emission wavelength in a VCSEL will vary by less than 1.4nm (compared to ~7nm for edge-emitters).

Applications:

3D sensors

Lidars

IR illumination

Medical application

Proximity sensors

Medical Application

Specifications:

Item no. TO850VC02

Item Name: 200mW 850nm VCSEL TO Laser Diode

LIV Graph and Wavelength

Package drawing:

Hot Tags: 200mw 850nm vcsel to laser diode suppliers, manufacturers China, factory, wholesale, made in China