850nm 25W Pulsed VCSEL Diode TO46
Features
Oxide isolation technology
Short rise time
High reliability
Easy to collimate
Specifications:
|
Parameters |
Typ. |
|
Pulse Optical Power |
25W |
|
Threshold Current |
0.1A |
|
Forward Pulse Current |
81A |
|
Emission Area |
370*371um |
|
Peak Wavelength |
850nm |
|
Pulse Forward Voltage |
37V |
|
Beam Angle |
20Degrees |
|
Wavelength Shift |
0.07nm/℃ |
|
Rise time |
2.8ns |
|
Soldering Temperature |
260℃ |
|
Substrate |
AlN (3535) / Cu/Ag (TO46) |
|
Case Operating Temp |
-40~85℃ |
|
Storage Temp |
-40~105℃ |
Note: In its maximum rating diode laser operation could damage its performance or cause potential safety hazard such as equipment failure.
LIV Graph
![7S34AUBGKOVO)AC~{2{]K]S](/Content/uploads/202098745/202002281327239499566.png)
Pulse and Wavelength
![F}FUD]NK}BTP(6RZ(8K5P`D](/Content/uploads/202098745/202002281328351931817.png)
Mechanical Specifications (unit:mm)
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