1000W 808nm Diode Laser Array With FAC

1000W 808nm Diode Laser Array With FAC

Item No:CC808KZ1000
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 1000w 808nm diode laser array with fac. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

1000W 808nm Diode Laser Array with FAC

 

Feature

  • High Efficiency, High-precision
  • 10bars, 808nm±5nm tolerance
  • Low Environmental Requirements
  • Long Working Lifetime
 

Application

  • Defense
  • Scientific Research
  • Military Project
  • Diode Pumping Solid-State market
product-800-800
  1. We offer a top-of-the-line horizontal stack option in the form of a 1kW 1064nm Conduction Cooled Diode Laser.
  2. This powerful laser boasts a QCW working mode and has been expertly designed to optimize packaging and heat-sinks, resulting in reduced overall thermal resistance.
  3. Our horizontal stack features AuSn hard solder, which ensures that the stacks are assembled in a compact and rugged package, guaranteeing durability and longevity.
  4. With its easy connection to a heat exchanger, this horizontal stack enables excellent thermal control, making it a reliable choice for a variety of applications.

Data Sheet

Item No: CC808KZ1000

Optical  

Center Wavelength

808nm

Wavelength Tolerance ±5nm

Output Power 

1000W

Working Mode QCW
Number of Bars 10

Pulse Width

200us

Duty Cycle

<2%

Electrical

 
Threshold Current  18A

Operating Current

100A

Operating Voltage 

20V

Thermal

 

Test Temperature

-45~60℃

Storage Temperature

-55~85℃

 

Drawing:

1

 

 

 

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