6W 808nm Chip on Submount Diode Laser
Description
Features
- 6W output power, 808nm center wavelength
- C-mount, F-mount also available
- 0.35nm/℃ wavelength temperature coefficient
- 100um/200um emitter width, chip on submount package
Usage
- Raman spectroscopy
- Military / Aerospace
- Defense and security
- Fiber Laser Pumping Source
Specifications
Item No.: COS808DL6
Item Name: 808nm 6W COS Diode Laser
| Optical | |
| Center Wavelength | 808nm±10nm |
| Output Power | 6W |
| Emitter Width | 200um |
| FWHM Fast Axis | 35Deg |
| FWHM Slow Axis | 10Deg |
| Electrical | |
| Threshold Current | 1A |
| Operating Current | 7A |
| Operating Voltage | 1.65V |
| Thermal | |
| Test Temperature | 25℃ |
| Storage | -30~70℃ |
| Wavelength Temperature Coefficient | 0.35nm/℃ |
Dimensions
6W 808nm Chip on Submount Diode Laser, the sub-modules within the chip are sub-mounted and are characterized by top, bottom and side mounting.
It is important to note that the diode laser emitters are available in widths of 100/200 μm.
The sub-mounted chips offered by Brandnew Laser are known for their exceptionally compact dimensions.
To ensure optimal performance, this SMD laser diode package needs to be properly soldered to the heat sink with a fast axis lens.
With a powerful 6W output power and 808nm center wavelength, this laser package is available in a C-mount configuration, with alternatives such as F-mount.
In addition, the package has a wavelength temperature coefficient of 0.35nm/°C and an emitter width of 100μm or 200μm, emphasizing the versatility of this advanced technology.
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