Description
Chip on Submount Laser Diode
Key Features:
Chip on submount design and P Down sealed package
AuSn bonding RoHS compliance
808nm,915nm,975nm wavelength optional
High electro-optical effiency
High reliablity and long lifetime
Application:
For pumping, illumination, materials processing and medical applications
Data sheet:
Item No.: COS808DL10
| Optical | |
| Center Wavelength | 808±5nm |
| Output Power | 10W |
| Spectral Width FWHM | 6nm |
| Slope Efficiency | 1.0W/A |
| Electrical | |
| Operating Current Iop | 12A |
| Threshold Current Ith | 1.5A |
| Operating Voltage Vop | 1.8V |
| Power Conversion Efficiency | 50% |
| Thermal | |
| Operating Temperature | 15-55℃ |
| Storage Temperature | -30~70℃ |
| Wavelength Temperature Coefficient | 0.3nm/℃ |
Package Drawing:
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