200W 808nm Laser Diode Bare Bar

200W 808nm Laser Diode Bare Bar

High Power 200W 808nm Laser Chip
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Description

200W 808nm Laser Diode Bare Bar

Overview

 

Feature:

Low beam divergence and small light emitting aperture

High power and high beam intensity IR laser radiation

Wide variety of bar configurations

High brightness

Application:

High-brightness semiconductor laser modules

Industrial pumping Source

Laser illumination

Dermatology and Surgery

Single Emitter Laser Chip

Data sheet:

 

Item No.: LC808SB200

Operation  
Center Wavelength 808nm
Output Power 200W
Operation Mode QCW
Geometrical  
Emitter Width 120um
Cavity Length 1500um
Cavity Thickness 120um
Cavity Width 160um
Electro Optical Data  
Threshold Current 25A
Operating Current 190A
Operating Voltage 1.9V
Slope Efficiency 1.2W/A
Slow Axis Divergence 12
Fast Axis Divergence 39
Spectral Width 4nm
Polarization TE

 

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