300W 808nm Umounted Semiconductor Diode Laser Bar and Chip

300W 808nm Umounted Semiconductor Diode Laser Bar and Chip

Item No:LC808SB300
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Description

00W 808nm Umounted Semiconductor Diode Laser Bar and Chip   Multi Emitter Semiconductor Laser Chips For Material Processing

 

Features:

  • High Power Laser Chip 300W
  • 808nm central wavelength
  • QCW working mode, 60 emitters
  • Our laser chip with high brightness, high reliability and high stability
  • Available With Any Mirco channel Cooled Configuration

Applications:

  • Laser light source
  • Direct material processing
  • Sensing lidar
Semiconductor Laser Chip 808nm

 

 

Data Sheet

Item No: LC808SB300

Item Name: Semiconductor Laser Bar Chip 808nm

Optical  
Central Wavelength 808nm
Output Power 300W
Working Mode QCW
Spectrum Width 4nm
Number of Emitter 60
Emitter Width 120
Cavity Width 160
Filling Factor 75%
Bar Width 10000
Cavity Length 1500
Thickness 130
Fast Axis Divergence(FWHM) 39Deg
Slow Axis Divergence (FWHM) 12Deg
Polarization Mode TE
Slope Efficiency 1.15W/A
Electrical  
Operating Current Iop 280A
Threshold Current Ith 30A
Operating Voltage Vop 1.9V
Power Conversion Efficiency  
Thermal  
Operating Temperature 25℃
Wavelength Temperature Coefficient 0.3nm/℃

 

Drawing:

300w 808 LC drawing

Laser diode stripe chips are bare wafers in which multiple laser chips are combined into a stripe that combines the power of the individual lasers to produce tens or even hundreds of watts of power. The primary applications for laser diode chips are medicine, laser processing, and free-space optical communications.
Laser diode rod chips are high-power semiconductor laser devices consisting of an array of individual laser diodes fabricated on a single chip. Laser diode rod chips are used in a variety of applications, including material processing, medical device manufacturing, printing, and imaging.
Each individual laser diode in a laser diode stripe is designed to emit light in a narrow spectral range, typically in the near infrared region. The output power of each laser diode ranges from a few hundred milliwatts to several watts, depending on the design and size of the device. Laser diode strip chips can emit light in either continuous wave (CW) or pulsed mode. In CW mode, the laser diode emits a continuous stream of light, while in pulsed mode, the laser diode emits short pulses of high-intensity light.
The fabrication process for laser diode strip chips typically involves epitaxial growth of active and cladding layers on a substrate, followed by photolithography and etching to define the device structure. Individual laser diodes are then formed by slicing the device into smaller pieces, each containing one or more laser diodes.
Laser diode chips are often packaged with additional optical and electronic components to efficiently couple the light into fiber or other transmission systems. The package also provides thermal management to dissipate the heat generated by the high power output of the device.
In general, laser diode chips provide high power and high brightness, making them suitable for a wide range of industrial and scientific applications.

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