100W 980nm CW Working Mode Diode Laser Chip With 47 Emitters For Pumping Source
Features:
- 100W output power at 780nm central wavelengthBesides
- CW working mode;
- multi emitter;
- 47 emitters;
- New epitaxial structure design and material epitaxy;
- we also provide 100W 808nm,300W 808nm, 500W 808nm, 100W 970nm……
Application:
Semiconductors for high-power diode lasers in direct material processing
For heating or lighting
Our 100W 980nm CW Working Mode Diode Laser Chip with 47 Emitters for Pumping Source have its incredible output power at 780nm central wavelength, multi emitter and new epitaxial structure design, this chip will revolutionize direct material processing, heating, and lighting in the semiconductor industry. Suitable for high-power diode lasers, it provides unmatched performance with an impressive range of options including 100W 808nm, 300W 808nm, 500W 808nm, and 100W 970nm. This product is the perfect solution for businesses looking to enhance their precision and efficiency. Contact us today to learn more about the 100W 980nm CW Working Mode Diode Laser Chip with 47 Emitters for Pumping Source and take your business to the next level.
Data Sheet
Item No: FC980SB100
Item Name:980nm 100W Single Bar Laser Chip
| Optical | Typical Value |
| Central Wavelength | 980nm |
| Output Power | 100W |
| Number of Emitter | 47 |
| Emitter Width | 100um |
| Emitter Pitch | 200um |
| Cavity Length | 1500um |
| Bar Length |
10mm |
| Bar Thickness | 115um |
| Electrical | |
| Operating Current Iop | 105A |
| Threshold Current Ith | 15A |
| Operating Voltage Vop | 1.6V |
| Thermal | |
| Operating Temperature | 25℃ |
| Wavelength Temperature Coefficient | 0.35nm/℃ |
| Storage Temperature | -40~80℃ |
Semiconductor laser diodes are used as the gain medium for ECLs. A laser diode is a semiconductor device about 250 to 500 μm long and 60 μm thick mounted on a copper or ceramic heat sink. Current is injected through the top ohmic contact. Photons are generated and guided by the epitaxial layers of the structure. The thin layer in which electrons and holes recombine to produce light is called the active region. Stimulated emission in the active region forms the basis of the laser action, which is driven by optical feedback from the facets or an external cavity.
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