10W 808nm Single Emitter Laser Chip

10W 808nm Single Emitter Laser Chip

Item No.: LC808SE10
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Description

10W 808nm Single Emitter Laser Chip

 

We produce our semiconductor materials under the strictest quality controls. We work only with state-of-the-art epitaxy, processing and facet coating technology. Our bars, semi-bars and single emitters for high-power diode lasers therefore meet the most exacting demands: They are extremely reliable, efficient and durable. Our semiconductor products are easily assembled using standard soldering methods.

Feature:

808nm central wavelength with 3nm tolerance, 10W output power

CW working mode

Wide variety of bar configurations 

High power and high beam intensity IR laser radiation

Application:

Medical and Aesthetic

Solid-state laser pumping

Lidar application

Material processing

Single Emitter Laser Chip

 

Data sheet:

Item No.: LC808SE10

 

Optical Type
Central Wavelength 808nm
Output Power 10W
Spectrum Width 6nm
Emitter Width 190um
Chip Width 500um
Cavity Length 4000um
Thickness 150um
Slope Efficiency 0.5W/A
Electrical
Operating Current Iop 13A
Threshold Current Ith 0.8A
Operating Voltage Vop 2V
Thermal
Test Temperature 25℃
Wavelength Temperature Coefficient 0.35nm/℃

 

 

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