10W 808nm Single Emitter Laser Chip
We produce our semiconductor materials under the strictest quality controls. We work only with state-of-the-art epitaxy, processing and facet coating technology. Our bars, semi-bars and single emitters for high-power diode lasers therefore meet the most exacting demands: They are extremely reliable, efficient and durable. Our semiconductor products are easily assembled using standard soldering methods.
Feature:
808nm central wavelength with 3nm tolerance, 10W output power
CW working mode
Wide variety of bar configurations
High power and high beam intensity IR laser radiation
Application:
Medical and Aesthetic
Solid-state laser pumping
Lidar application
Material processing

Data sheet:
Item No.: LC808SE10
| Optical | Type |
| Central Wavelength | 808nm |
| Output Power | 10W |
| Spectrum Width | 6nm |
| Emitter Width | 190um |
| Chip Width | 500um |
| Cavity Length | 4000um |
| Thickness | 150um |
| Slope Efficiency | 0.5W/A |
| Electrical | |
| Operating Current Iop | 13A |
| Threshold Current Ith | 0.8A |
| Operating Voltage Vop | 2V |
| Thermal | |
| Test Temperature | 25℃ |
| Wavelength Temperature Coefficient | 0.35nm/℃ |
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