5W 10W 808nm C-Mount Single Emitter Diode Laser

5W 10W 808nm C-Mount Single Emitter Diode Laser

Item No.: CM808DL5
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 5w 10w 808nm c-mount single emitter diode laser. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

5W 10W 808nm C-Mount Single Emitter Diode Laser

Product Description

Features:

CM808DL5/CM808DL10 is a high-quality C-mount package laser diode, which Fabry-Perot laser based on state-of-the-art, quantum-well epitaxial layer growth and reliable ridge waveguide structure. CM808DL5/CM808DL10 is easy to mount and provides good thermal contact, making it an ideal choice for high power and OEM applications. C-mount package has two weled gold contacts to the n- and p- doped semiconductor layers.

Options:

CM808DL5/CM808DL10 single emitter laser diode series, which based on Quantum-well epitaxy and ridge waveguide structure design. C-Mount packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.

C-Mount
 

 

Data sheet:

Item No.: CM808DL5

Optical  
Center Wavelength λ 808nm
Wavelength Tolerance ±5nm
Output Power 5W
Slope Efficiency 1.1W/A
Electrical  
Operating Current Iop 5A
Threshold Current Ith 0.3A
Operating Voltage Vop 2V
Power Conversion Efficiency 50%
Thermal  
Operating Temperature 15~35℃
Storage Temperature -40~80℃
Wavelength Temperature Coefficient 0.3nm/℃

 

Drawing

15874568513859434

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