10W 808nm F-Mount Laser Diode With FAC

10W 808nm F-Mount Laser Diode With FAC

Item No.: FM808KZ10
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Description

Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 10w 808nm f-mount laser diode with fac. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.

 

10W 808nm F-Mount Laser Diode with FAC

 

10W 808nm F-Mount Laser Diode with FAC are an excellent choice for customers seeking state-of-art performance in a low cost submount design. These lasers are provided across the InP wavelength range of 7xx to 19xx and come in a variety of power, wavelength and lensed configurations. Applications for Brandnew’s sub mounted lasers include OEM medical, consumer medical, LiDAR, Military targeting, range finding and illumination. Custom wavelengths and configurations available upon request.Grin Lens f=274um used to match fast axis divergence to slow axis divergence.

 

Features:

High reliability

High stability

Harsh environment applications

High brightness

AuSn bonding

 

2W 1064nm F-Mount Laser Diode with FAC

Spec sheet:

Item No.: FM808KZ10

Optical
Center Wavelength λ 808nm
Wavelength Tolerance ±10nm
Output Power 10W
Fast Axis Divergence 10Deg
Slow Axis Divergence 10Deg
Electrical
Operating Current Iop 13A
Threshold Current Ith 1A
Operating Voltage Vop 2.2V
Thermal
Test Temperature 25℃
Storage Temperature -30~70℃
Wavelength Temperature Coefficient 0.3nm/℃

 

Package Drawing

1

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