Hangzhou Brandnew Technology Co., Ltd. is one of China's leading manufacturers and premier suppliers of advanced 2.5gbps ingaas/inp apd-tia to-can. Operating a state-of-the-art factory, we specialize in the entire production spectrum—from high-performance chips, TO/F/C Mounts, COS, and MCC bars, to robust stacks and advanced fiber-coupled solutions.
2.5Gbps InGaAs/InP APD-TIA TO-CAN
Brandnew's avalanche photodiode (APD) with burst-mode TIA is packaged in a 6-pin TO-46 case with aspherical lens cap. The APD's integrated transimpedance amplifier (TIA) can be operated in a burst mode that lifts the input data rate 2.5 Gb/s . Users can control the burst mode via a logic signal connected to pin 5 of the APD's TO-46 case.
Designed for an optical wavelength range of 900 nm to 1640 nm, the APD with burst-mode TIA features a dark current of 0.4 nA typical at 98% breakdown voltage. Typical responsivity is 13 A/W at 1310 nm wavelength and 5mW optical input power.
Features
Long wavelength operation
Data rate up to 2.5Gbps
3.3V low-voltage operation
Package:TO-46
Internal AGC Circui t
Differential output
Excellent reliability, meeting EU RoHS requirements
High sensitivity
Applications
XG-PON OLT Receiver
Description
The product integrates a high speed Photodiode PIN and TIA with AGC.
Data sheet:
| Absolute Maximum Ratings | |
| Storage Temperature | -55-+150℃ |
| APD Reverse Current | 2mA |
| Input Optical Power | 5mW |
| Soldering Temperature | 260/10℃ /s |
| Recommended Operating Conditions | |
| Operating Temperature | 25℃ |
| TIA Operating Voltage | 3.3V |
| APD Operating Voltage | 3-5.2V |
| Opto – Electrical Characteristic | |
| Optical Wavelength | 900-1650nm |
| Supply Current | 35mA |
| Breakdown voltage | 40-52V |
| Dark current | 0.4-10nA |
| Responsivity | 13A/W |
| Bandwidth | 1.8GHz |
| Sensitivity | -31.5dBm |
| Optical Overload | -4dBm |
Drawing:
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