600W 808nm Diode Laser Array With FAC

Product Description
For the highest beam quality, the diode bars should be as close to each other as possible. On the other hand, efficient cooling requires some minimum thickness of the heat sinks which need to be mounted between the bars. Due to that minimum spacing, the beam quality of the combined output of a diode stack in the vertical direction (and subsequently its brightness) is much lower than that of a single diode bar.
There are, however, several techniques for significantly mitigating this problem, e.g. by spatial interleaving of the outputs of different diode stacks, by polarization coupling, or by wavelength multiplexing. Various types of high-power beam shapers and related devices have been developed for such purposes. Depending on the application, a diode stack may be used with or without attached optics. A common option is the use of fast axis collimation lenses, which are directly attached to the bar

Data sheet
Item No.:WC808VS600
| Optical | |
| Center Wavelength | 808nm |
| Wavelength Tolerance | ±10nm |
| Working Mode | QCW |
| Output Power | 600W |
| Fast Axis Divergence(FWHM) | 38Deg |
| Slow Axis Divergence(FWHM) | 12Deg |
| Pulse Width | ≤400ms |
| Duty Cycle | ≤40% |
| Electrical | |
| Operating Current | 50A |
| Threshold Current | 10A |
| Operating Voltage | 18V |
| Power Conversion Efficiency | 50% |
| Thermal | |
| Operating Temperature | 20~30℃ |
| Storage Temperature | 0-55℃ |
Package Drawing

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